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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1807 description drain current i d = 4a@ t c =25 drain source voltage : v dss = 900v(min) fast switching speed applications high breakdown voltage absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 900 v v gs gate-source voltage 30 v i d drain current-continuous@ t c =25 4 a p tot total dissipation@t c =25 60 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1807 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 10ma 900 v v (br)gss gate-source breakdown voltage v ds = 0; i g = 100 a 30 v v gs (th ) gate threshold voltage v ds = v gs ; i d =1ma 2.0 3.0 v v df body to drain diode forward voltage i s = 4 a, v gs = 0 0.9 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 2a 4.0 i gss gate-body leakage current v gs = 25v;v ds = 0 10 a i dss zero gate voltage drain current v ds = 720v; v gs = 0 250 a c iss input capacitance v ds =10v; v gs =0v; f t =1mhz 740 pf c rss reverse transfer capacitance 305 c oss output capacitance 150 t r rise time v gs =10v; i d =2a; v dd =200v; r l =15 60 ns t on turn-on time 15 t f fall time 80 t off turn-off time 100 pdf pdffactory pro www.fineprint.cn |
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